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Publications in 2002 and before

[141] W.G. Lu, Z. H. Shu, J. M. Dong, and E.G. Wang, Phys. Rev. B66, 245105(2002)
          “Quantum Monte Carlo simulation of the Hubbard model containing off-diagonal hopping.”

[140] C.Y. Zhi, X.D. Bai, and E.G. Wang, Appl. Phys. Lett. 81, 1690(2002)
        “Enhanced Field Emission from Carbon Nanotubes by Hydrogen Plasma Treatment.”

[139] S. Meng, L. F. Xu, E. G. Wang, and S.W. Gao, Phys. Rev. Lett. 89?176104(2002)  “Vibrational Recognition of Hydrogen-bonded Water Networks on a Metal Surface”.

[138]  H.Y. Wang, K.Q. Chen, E.G. Wang, Phys. Rev. B66, 082405(2002) “Abnormal Magnetism and Phase Transformation of a Heisenberg-like Model with Internal Spin Fluctuation”.

[137] H.L. Sun, J.F. Jia, D.Y. Zhong, Q.T. Shen, M. Sun, Q.K. Xue, and E.G. Wang, Phys. Rev. B66, 085423 (2002) “Scanning Tunneling Microscopy Study of Polymerized Carbon Nanobells: Electronic Effect and Evidence of Nitrogen Incorporation”.

[136] J. Wu, E. G. Wang, K. Varga, B.G. Liu, S. T. Panfelides, and Zhenyu Zhang, Phys. Rev. Lett. 89?146103 (2002) 
         “Island Shape Selection in Pt(111) Submonolayer Homoepitaxy without or with CO as Adsorbates”.

[135] Y.G. Yao, Ph. Ebert, M.Z. Li, Zhenyu Zhang, and E.G. Wang, Phys. Rev. B 66, 041407(2002) 
         (Rapid Communication)  “Decay Characteristics of Two-dimensional Islands on Strongly Anisotropic Surfaces".

[134] W. D. Xiao, Q. L. Guo, X. Kan, and E.G. Wang, J. Phys. Chem. B106, 4721 (2002)
          “Cu on V2O3(0001) films: growth and interaction”.

[133] W. D. Xiao, Q. L. Guo, X. Kan, and E.G. Wang, J. Phys. Cond. Matter 14, 6321(2002)
         “Interaction of metal with oxide films: V on Cr2 O3 (0001) /Re(0001) and Cr on V2O3 (0001) /Re(0001)”.

[132] Y.K. Pu, Z.G. Guo, Z.D. J. Ma, Z.C. Guan, G.Y. Zhang, E.G. Wang, Pure and Applied Chemistry 74,  459(2002) “Comparative Characterization of High-density Plasma Reactors using Emission  Spectroscopy from VUV to NIR”.

[131] Y. Chen, S.Z. Deng, N.S. Xu, J. Chen, X.C. Ma, and E.G. Wang, Materials Sci. and Eng. A327, 16(2002)
         “Physical Origin of Non-linearity in Fowler-Nodheim Plots of Aligned Large Area Multi- walled
           Nitrogen-containing Carbon   Nanotubes”.

[130] G. Y. Zhang, D. Y. Zhong, X. C. Ma, and E.G. Wang, J. Appl. Phys. 91, 9324(2002)
         “Polymerized Carbon Nitride Nanobells.”

[129] C.Y. Zhi, X.D. Bai, and E.G. Wang, Appl. Phys. Lett. 80, 3590(2002)
         “Raman Characterization of  Boron Carbonitride Nanotubes.”

[128] C.Y. Zhi, J.D. Guo, X. D. Bai, and E.G. Wang, J. Appl. Phys. 91, 5325(2002)
          “Adjustable Boron  Carbonitride Nanotubes.”

[127] J. D. Guo, C.Y. Zi, X.D. Bai, and E.G. Wang, Appl. Phys. Lett. 80, 124(2002)
         “Boron Carbonitride Nanojunction”

[126] D.Y. Zhong, G.Y. Zhang, S. Liu, T. Sakurai, and  E.G. Wang, Appl. Phys. Lett. 80, 506(2002)
         “Universal Field Emission Model for Carbon Nanotubes on a Metal Tip”

[125] D. Y. Zhong, S. Liu, G. Y. Zhang, and E.G. Wang, J. Appl. Phys. 89, 5939(2001)
         “Large-scale well aligned Carbon Nitride nanotube films: Low temperature growth and electron field emission.”

[124] J.L. Li, X.J. Liang, J.F. Jia, J.Z. Wang, E.G. Wang, and Q.K. Xue, Appl. Phys. Lett. 79, 2826 (2001)
        “Spontaneous Formation of Ordered Indium Nanowire Array on Si(001).”

[123] D.Y. Zhong, G.Y. Zhang , E.G. Wang, Q. Wang, H. Li, and X.J. Huang, Appl. Phys. Lett. 79,3500(2001)
         “Lithium  Storage in Polymerized Carbon Nitride Nanobells”.

[122] K.H. Wu, E.G. Wang, S. Liu, and X.R. Wang, J. Appl. Phys. 89, 4810(2001)
        “Bistable characteristic and current jumps in field electron emission of nanocrystalline diamond films

[121]* E.G. Wang, J. American Ceramic Society 85, 105(2002)
          “Nitride-related Nanomaterials by Chemical Vapor Deposition: Structure and Property”.

[120] X.D. Bai, D.Y. Zhong, G.Y. Zhang, X. Ma, , E.G. Wang, Y. Chen, and D.T. Shaw,
       Appl. Phys. Lett. 79, 1552(2001) “Hydrogen Storage in Carbon Nitride Nanobells”.

[119] S.J. Liu, E.G. Wang, C.H. Woo, and H.C. Huang, J. Comput. Aided Mater. Design 7, 195(2001)
        “Three-dimensional Schwoebel-Ehrlich Batter”. (Highlighted as News and Views in Nature, June 27, 2002)

[118]* X.D. Bai, C..Y. Zi, and E.G. Wang, J. Nanosci. and Nanotech. 1, 55(2001)
         “Boron Carbonitride Nanofibers: Synthesis, Characterization, and Photoluminescence Properties”.

[117] Y. Chen, D.T. Shaw, X.D. Bai, E.G. Wang, C. Lund, and  D.D.L. Chung, Appl. Phys. Lett. 78, 2128 (2001) 
          “Hydrogen storage in aligned carbon nanotubes”

[116] J. Yu, E.G. Wang, and X. D. Bai, Appl. Phys. Lett. 78, 2226(2001)
         “Electron field emission from carbon nanoparticles prepared by microwave-plasma chemical-vapor deposition”.

[115] N.S. Xu, Y. Chen, S.Z. Deng, J. Chen, X.C. Ma, and E.G. Wang, J. Phys. D: Appl. Phys. 34, 1597(2001)
       “Vacuum Gap Dependence of Field Electron Emission Properties of Large Area Multi-Walled Carbon Nanotube Films”.

[114] J. Yu, Q. Zhang, J. Ahn, S.F. Yoon, B. Gan, K. Chew, K.H. Tan, X.D. Bai,
        and E.G. Wang, J. Vacuum Sci. & Tech. B 19, 671(2001) “Growth and Structure of Aligned BCN Nanotubes”..

[113] M.Z. Li, J.F. Wendelken, B.G. Liu, E.G. Wang, and Zhenyu Zhang, Phys. Rev. Lett. 86, 2345(2001)
        “Decay Characteristics of Surface Mounds with Contrasting Interlayer Mass Transport Channels”.

[112]  N.S. Xu, Y. Chen, S.Z. Deng, X.C. Ma, and E.G. Wang, Chinese Physics Letters 18, 1278(2001)
          “A New Mechanism Responsible for the Enhancement of Local Electric Field on the Surface of Emitting”.

[111]  F. Xie, P. von Blanckenhangen, J. Wu, J.W. Liu, Q.Z. Zhang, Y.C. Chen, and E.G. Wang,
        Applied Surface Science 181, 139(2001) “Contamination of Si Surface in Ultrahigh Vacuum and Formation of
        SiC Islands”.

[110] X. Ma and E.G. Wang, Appl. Phys. Lett. 78, 978(2001)  "CNx/Carbon Nanotube Junctions Synthesized by Microwave Chemical Vapor Deposition".

[109] W. Zhou, X.C. Ma, Z.Y. Yuan, E.G. Wang, Surface And Interface Analysis 32, 236(2001)
        “HRTEM Surface Charaterization of Nanoscale Solid-State Materials”.

[108] J.W. Liu, D.Y. Zhong, F.Q. Xie, M. Sun, E.G. Wang, and W.X. Liu, Chem. Phys. Lett. 348, 357(2001)
 “Synthesis of SiC Nanofibers by Annealing Carbon Nanotubes Covered with Si”.

[107] Y.Q. Xu, B.G. Liu, E.G. Wang, and D.S. Wang, J. Phys. D: Appl. Phys. 34, 1137(2001)
          “Formation Mechanism of Adatom Islands on fcc(111) Substrates”.

[106] X. Ma, E.G. Wang, R. D. Tilley, D. A. Jefferson, and W. Zhou, Appl. Phys. Lett. 77, 4136 (2000) 
          "Size-Controlled Short Nanotubes:  Growth and Formation Mechanism".

[105] J. Yu, J. Ahn, S.F. Yoon, Q. Zhang, Rusli, B. Gan, K. Chew, M. B. Yu, X. D. Bai, and E. G. Wang, Appl. Phys. Lett. 77, 1949(2000) “Semiconducting boron carbonitride nanostructures: Nanotubes and nanofibers”.

 

[104] K. H. Wu, E. G. Wang, Z. X. Cao, Z. L. Wang, and X. Jiang, J. App. Phys. 88, 2967(2000) “Microstructure and its effect on field electron emission of uniform size-controlled nanocrystalline diamond films”.

 

[103] J. X. Zhong, E. G. Wang, Q. Niu, and Z. Zhang, Phys. Rev. Lett. 84, 3895 (2000) “Morphological symmetry breaking during epitaxial growth at grazing incidence”.

[102] X.D. Bai, J. Yu, S. Liu, and E.G. Wang, Chem. Phys. Lett. 325, 485(2000) “Role of Nickel

         Particles in Selected Growth of Boron Carbonitride Tubular Structures”..

[101] J. Yu, X.D. Bai, J. Ahn, S.F. Yoon, and E.G. Wang, Chem. Phys. Lett. 323, 529(2000) "Highly oriented rich boron B-C-N nanotubes by bias-assisted hot filament chemical vapor deposition".
 

[100] J.W. Liu, F.Q. Xie, Q.Z. Zhang, K.H. Wu, X.C. Ma, E.G. Wang, and W.X. Liu, Thin Solid Films 375, 77(2000) "Investigations of Fuch-Kliewer phonons and hydrogen adsorption of 6H-SiC surface by high-resolution electron-energy-loss spectroscopy".
 

[99] M. Sun, N. Xu, Y.W. Cao, J.N. Yao, andE.G. Wang, J. Mater. Sci. Lett. 19, 1407(2000) "Preparation, microstructure and photochromism of  a new nanocrystalline WO3 film".
 

[98] M. Sun, N. Xu, Y. W. Cao, J. N. Yao, and E. G. Wang, J. Mater. Res.15, 927(2000) “Nanocrystalline tungsten oxide thin film: Preparation, microstructure, and photochromic behavior”.
 

[97] X.D. Bai, E. G. Wang, J. Yu, and H. Yang, Appl. Phys. Lett. 77, 67(2000)  “Blue-violet PL from large-scale highly alinged BCN nanofibers”.
 

[96] N. Xu, M. Sun, Y. W. Cao, J. N. Yao, and E. G. Wang, Appl. Surf. Sci.157, 81(2000) “Influence of pH on structure and photochromic behavior of nanocrystalline WO3 films”.
 

[95] J. Yu, E. G. Wang, J. Ahn, S. F. Yoon, Q. Zhang, J. Cui, and M. B. Yu, J. Appl. Phys. 87, 4022(2000) “Turbostratic boron carbonitride films produced by bias-assisted HFCVD”.
 

[94] X. D. Bai, J. D. Guo, Jie, Yu, E. G. Wang, Jun Yuan, and W. Zhuo, Appl. Phys. Lett. 76, 2624(2000)  “Synthesis and field emission behavior of highly oriented boron carbonitride nanofibers.”
 

[93] J. Wu, B.G. Liu, Zhenyu Zhang, and E.G. Wang, Phys. Rev. B 61, 13212(2000) “Island evolution in epitaxial growth mediated by a surfactant layer: Reaction Limited Agregation.”
 

[92] M. H. Kuang, Z. L. Wang, X. D. Bai, J. D. Guo, and E. G. Wang, Appl. Phys. Lett. 76, 1255(2000) “Catalytically active Ni110 surfaces in growth of carbon tubular structures”.
 

[91] N.S. Xu, J. Chen, S.Z. Deng, K.H. Wu, and E.G. Wang, J. Phys. D: Appl. Phys. 33,  1572(2000) “Study of Field Electron Emission from Nanocrystalline Diamond Thin Films Grown from a N2/CH4 Microwave Plasma”.

[90] J. D. Guo, X.C. Ma, R. Zhao, and E.G. Wang, J. Mater. Sci. 35, 2009(2000)
       “Carbon nitride films on diamond layers and their thermal behavior”.

[89] Minya Ma, T. Tsuru, T. Ogawa, Z.H. Mai, C.Y. Wang, J.D. Guo, X.C. Ma, and E.G. Wang,
       J. Phys. Condens. Mater. 11, L191(1999) “Observation of defects in a CN/diamond/Si structure by
         infrared light scattering tomography”.

[88] X.C. Ma, E.G. Wang, W. Zhou, D. A. Jefferson, J. Chen, S.Z. Deng, N.S. Xu, and J. Yuan, Appl.  Phys. Lett. 75, 3105(1999) “Polymerized carbon nitrogen nanobells and their field emission.”
 

[87] B.G. Liu, J. Wu, E.G. Wang, and Zhenyu Zhang, Phys. Rev. Lett. 83, 1195(1999) “Two-dimensional pattern formation in surfactant-mediated epitaxial growth.”
 

[86] J.Chen, S.Z.Deng, N.S.Xu, K.H.Wu, E.G.Wang, Appl. Phys. Lett. 75, 1323(1999) “Observation of a non Fowler-Nordheim Field-Induced Electron Emission Phenomenon from Chemical  Vapor Deposited Diamond Films”.
 

[85] * E.G. Wang, Adv. Mater. 11, 1129(1999). “New development in covalently bonded carbon-nitride and related materials”.
 

[84] J. Yu and E.G. Wang, Appl. Phys. Lett.74, 2948 (1999). “Turbostratic B-C-N film and its field emitting behavior.”
 

[83] Z. X. Cao, R. Mueller, E.G. Wang, and Y.X. Nie, Chin. Phys. Lett.16, 364(1999).  “Equilibrium segregation to free surface: Kinetics and experiment.”

 

[82] Z.X. Cao, J.D. Guo, E.G. Wang, and F.Q. Liu, Chin. Phys. Lett. 16, 92(1999) “Electron-spectroscopy Study of Amorphous CN: Ti Films”.

 

[81] X. Luo, G.F. Qian, E.G. Wang, and C.F. Chen, Phys. Rev. B 59,  10125(1999). “Molecular dynamics simulation of Al/SiC interface structures.”

 

[80] J. Yu, E.G. Wang, and G.C. Xu, J. Mater. Res.14, 1137 (1999). “Synthesis and characterization B-C-N compounds on molybdenum.”

 

[79] K. H. Wu, E.G. Wang, J. Chen, and N.S. Xu, J. Vac. Sci. Technol, B17, 1059(1999). “Nitrogen-incorporated Distorted Nanocrystalline Diamond Films: Structure and Field Emission Properties.”

 

[78] Z. Gong, E.G. Wang, G. C. Xu, and Y. Chen, Thin Solid Films 348, 114(1999). “Influence of Deposition Condition and Hydrogen on Amorphous-to-polycrystalline SiCN films.”

 

[77] J. L. Li, G. Meng, X.M. Hu, and E.G. Wang, Chin. Phys. Lett.15, 822(1998). “Highly oriented diamond film growth on silicon by ECR-MWCVD”.

[76] Y. M. Zhou and E.G. Wang, J. Appl. Phys.84, 4308(1998) “First-principles electronic structure calculations of  Sb/Ga(Al)Sb semimetal-semiconductor superlattices.”

 

[75] Jun Chen, N.S. Xu, E.G. Wang, S.Z. Deng, D.H. Chen, and A.X. Wei, Chin. Phys. Lett.15, 539(1998). “A Study of Field Electron Emission from Thin Amorphous Carbon- Nitride Films.”

 

[74] J. Yu, E.G. Wang, and G.C. Xu, Chem. Phys. Lett. 292, 531(1998). “Observations of Micrometer BCN rods by bias-assisted hot-filament chemical vapor deposition”.

 

[73] G. Liu and E.G. Wang, Solid State Commun. 105, 671(1998), “Extended Molecular Dynamics Scheme for Crystals with Fully Relaxed Size”.

 

[72] X. Luo, G.F. Qian, W.D. Fei,  E.G. Wang, and C.F. Chen, Phys. Rev.B 57, 9234(1998). “A systemtic study of b-SiC surface structures by molecular dynamics simulations.”

 

[71] C.F. Chen, E.G. Wang, Y.M. Gu, D.M. Bylander, and L. Kleinman, Phys. Rev.B 57, 3753(1998). “Unexpected band-gap collapse in quaternary alloys at the group-III-nitride/GaAs interface:  GaAlAsN”.

 

[70] C.Z. Wang, E.G. Wang, and Q.Y. Dai, J. Appl. Phys. 83, 1975(1998). “First principles calculations of structural properties of b-Si3-nCnN4 (n=0,1,2,3)”.

 

[69] K.H. Wu, E.G. Wang, Q. Jian, and G.C. Xu, J. Appl. Phys. 83, 1702(1998). “ECR plasma-assisted CVD  synthesis of carbon-nitride films on diamond”.

 

[68] T. Werninghaus, D.R.T. Zahn, E.G. Wang, and Y. Chen,  Diam. Rel. Mater.7, 52(1998). “Micro-Raman spectroscopy investigation of C3N4 crystals deposited on nickel substrates.”

[67]* E.G.Wang, Progress in Materials Science 41(Monograph), 241(1997).
       “Research on Carbon Nitrides”

[66] Y. Chen, F. Chen, and E.G.Wang, J. Mater. Res. 13, 126(1998). “Uniform and rapid nucleation of diamond via biased hot filament chemical vapor deposition.”

 

[65] Y. Chen, L.P. Guo, and E.G.WangJ. Mater. Sci. Lett. 16, 594(1997). “Effect on selected-phase growth of crystalline C-N films by controlling nitrogen, hydrogen, and methane mixture.”

 

[64] Y. Chen, L.P. Guo,  E.G.Wang, L. Li, and Z.X. Zhao, J. Crystal Growth 178, 639(1997).“Identification of a new tetragonal C-N phase.”

 

[63] Gang Liu, E. G. Wang, and D.S. Wang, Chin. Phys. Lett. 14, 764(1997). “A new molecular-dynamics approach for fully relaxed crystals at constant pressure”.

 

[62] Y. Chen, L.P. Guo,  E.G.Wang, L. Li, and Z.X. Zhao, Chem. Phys. Lett.268, 26(1997).“Identification of a new C-N phase with monoclinic structure.”

 

[61] Y. Chen, L.P.Guo, and E.G.Wang, J. Crystal Growth 179, 515(1997). “Effect of the methan concentration at the growth of prototypes C-N films.”

 

[60] Liqiang Zhu, E.G.Wang, and Liyuan Zhang, Phys. Rev.B 56, 10308(1997). “Electronic structure, interfacial chemistry, and optical property of (II-VI)n/(IV2)m (110) superlattice”. 

 

[59] Liqiang Zhu, E.G.Wang, and Liyuan Zhang, physica status solidi (b) 204, 643(1997). “Tight-binding calculation: electronic structure of (BeSe)n/(Si2)m  superlattices”.

 

[58] Y. Chen, L.P. Guo, and E.G.Wang, Phil. Mag. Lett.75, 155(1997). “Experimental evidence for a-and b-phases of pure crystalline C3N4 in films deposited on nickel substrates.”

 

[57] *E.G.Wang, Y. Chen, and L.P. Guo, Physica Scripta T69, 108(1997). “Synthesis and characterization of pure crystalline C-N film.”

 

[56] E.G.Wang, Y. Chen, L.P. Guo, and F. Chen, Science in China 27, 49(1997). “Study on the C3N4 crystals (I) : Growth on silicon.”

 

[55] E.G.Wang, Y. Chen, and L.P. Guo,  Science in China 27, 154(1997). “Study on the C3N4 crystals (II) : Growth on nickel.”

 

[54] E.G.Wang, Acta Phys. Sinica 46, 117(1997). “Surface relaxation and its influence on fermi level pinning of Zn/GaAs (110).”

 

[53] Y. Chen, L.P. Guo, E.G. Wang, and R.H. Prince, MRS Symp. Proc.(1996).“Synthesis  of crystalline C3N4 films and the new C-N phases”.

 

[52] Yan Chen, Liping Guo,Feng Chen, and E.G. Wang, J. Phys. : Conden. Matter 8, L685 (1996). “Synthesis and characterization of C3N4 crystal on silicon.”

 

[51] Yan Chen, Liping Guo, and E.G. Wang, Mod. Phys. Lett. B10,615(1996). “Direct observation of C3N4 single crystal by scanning electron microscopy.”

 

[50] Yan Chen, E.G. Wang , Feng Chen, and Liping Guo, Mod. Phys. Lett. B10,576(1996). “Synthesis of high quality crystalline C-N films on silicon.”

 

[49] Xiaoming Hu, E.G. Wang, and Yirong Xing, Appl. Surf. Sci. 103, 217(1996). “A surface structure model for Si(337).”

 

[48] Y.M.Gu, Tao Pang, C.F.Chen, E.G.Wang, C.S.Ting, D.M. Bylander, and Kleinman, Phys. Rev. B 54, 13784( 1996). “First-principle study of the quaternary semiconductor superlattices (GaX)1/(YAs)1 (X=N,P; Y=Al,In).”

 

[47] Kui-juan Jin, Shao-hua Pan, Guo-zhen Yang, and E.G.Wang, Phys. Lett. A, 220,247 (1996).  “A Monte Carlo study of thin-film growth by laser -MBE.”

 

[46] E.G.Wang, Physics and Simulation of Optoelectronic Devices IV, ed.by W.W.Chou and M.Osinski, SPIE 2693,1996, p.40. “Monto Carlo simulation of exciton states in spatially separated electron-hole system.”

 

[45] E.G.Wang, Quantum Well and Superlattice Physics VI, ed. by G.H.Dohler and T.S. Moise, SPIE 2694,1996, p.195. “Interfacial chemistry in ZnS/Si and ZnSe/Si superlattices.”

 

[44] E.G.Wang, Electro-Optic and Second Harmonic Generation Materials, Devices and applications, ed. by M.Eich, B.H. Chai, and M.H.Jiang, SPIE 2897, 1996, p.68. “Excitons in novel quantum materials : A Monte Carlo study.”

 

[43] E.G.Wang, Display Devices and Systems, ed. by E. G. Lean, Z. Tian, and B.G. Wu, SPIE 2892, 1996, p.225. “Heteroepitaxial diamond on Si (100) substrates.”

 

[42] E.G.Wang,  Appl. Surf. Sci. 104, 626(1996). “(II-VI)m/(IV2)n (110) superlattice: Interfacial chemistry, electronic structure, and optical property.”

 

[41] E.G.Wang  and C.S. Ting, Appl. Phys. Lett.66, 1400(1995). “Indirect-direct band gap transition and enhancement of optical absorption induced by disorder in GaP/AlP superlattices.”

 

[40] E.G.Wang and C.S. Ting, Phys. Rev.B51, 9791(1995). “Electronic structures and optical properties of ZnS/Si superlattice.”

 

[39] E.G.Wang, Y.C. Zhou, C.S.Ting, J.B. Zhang, Tao Pang, and C.F. Chen, J. Appl. Phys. 78, 7099(1995). “Excitons in spatially separated electron-hole system: A quantum Monte Carlo study.”

 

[38] E.G.Wang and C.S. Ting, J. Appl. Phys. 77, 4107(1995). “Optimal epilayers on silicon substrate: electronic and optical properties of ZnS/Si superlattice.”

 

[37] E.G.Wang , C.F. Chen, and C.S. Ting, J. Appl. Phys. 78, 1832(1995). “Tight-binding calculation of ZnSe/Ge superlattice: electronic structure and optical property.”

 

[36] E.G.Wang , J.H. Xu, W.P. Su, and C.S. Ting, Appl. Phys. Lett. 64, 443(1994). “Enhancement of optical absorption induced by disorder in three dimensional random superlattices.”

 

[35] E.G.Wang , J.N. Decarpigny, and G. Allan, J. Phys.: Condens. Matter 6, 4999(1994). “Geometric and electronic structure of a magnesium overlayer on GaAs (110) surface.”

 

[34] E.G.Wang , phys. sta. sol.b 186, K1(1994). “Disorder effect on electronic and optical properties of three dimensional random superlattices.”

 

[33] E.G.Wang , J.H. Xu, W.P. Su, and C.S. Ting, J. Appl. Phys. 76, 5318(1994). “Electronic structures of  Sb/Ga(Al)Sb semimetal-semiconductor superlattices.”

 

[32] E.G.Wang , W.P. Su, and C.S. Ting, J. Appl. Phys. 76, 3004(1994). “Effect of the degree of disorder on electronic and optical properties in random superlattices.”

 

[31] E.G.Wang , J.H. Xu, W.P. Su, and C.S. Ting, Appl. Phys. Lett. 63, 1411(1993).“Electronic structure of periodic random superlattice [(GaAs)m/(AlAs)n]l .”

 

[30] J. H. Xu, E.G.Wang ,  W.P. Su, and C.S. Ting, Phys. Rev. B48, 17271(1993). “A tight-binding theory of the electronic structures for rhombohedral semimetals.”

 

[29] E.G.Wang , Physica B185, 85(1993). “A model for the buffer layer formed on silicon during HFCVD diamond growth.”

 

[28] E.G.Wang ,  J. Jiang, X.C. Zhou, A.Y. Du, and L.M. Peng, Superlattice  and Microstructures 13,387(1993). “Strain relaxation induced by interfacial step of GaAs/In0.2Ga0.8As superlattice.”

 

[27] E.G.Wang, J.H. Xu, W.P. Su, and C.S. Ting, Physics and Applications of Defects in Advanced Semiconductors, ed. by M.O. Manasreh, H.J. von Bardeleben, G.S. Pomrenke, M. Lannoo, D.N. Talwar, MRS Symp. Proc. 325, (1993) p.481.“Optical and electronic properties of GaAs/AlAs random superlattices.”

 

[26] J.H. Xu, E.G.Wang , W.P. Su, and C.S. Ting, Physics and Applications of Defects in  Advanced Semiconductors, ed. by M.O. Manasreh, H.J. von Bardeleben, G.S. Pomrenke, M. Lannoo, D.N. Talwar, MRS Symp. Proc. 325,  (1993) p.487. “A tight-binding theory of the electronic structures for rhombohedral semimetals and Sb/GaSb, Sb/AlSb superlattices.”

 

[25] J.Jiang, X.C. Zhou, A.Y. Du, L.M.Peng, E.G.Wang, S.M. Mu, and Z.T. Zhong, Superlattice and Microstructures 13, 379(1993). “A REM study of inhomogeneous stress fields induced by interfacial steps at the In0.2Ga0.8As/GaAs interfaces.”

 

[24] E.G.Wang and D.S. Wang, J. Phys.: Condens. Matter 4, 1311(1992). “Native defects in GaP/InP SLs: local electronic structures and diffusion mechanism.” 

 

[23] E.G.Wang, phys. stat. sol. b174, 12(1992). “Determination of complexes and diffusion mechanism  in GaP/InP strained-layer superlattice.”

 

[22] H.W. Xu, X.C. Zhou, G.C. Xu, Q.G. Du, E.G.Wang, D.S. Wang, L.G. Zhang, and C.J. Chen, Appl. Phys. Lett. 61, 2193(1992). “Photoreflectance study of AlAs/GaAs gradient period superlattice.”

 

[21] E.G.Wang, phys. stat. sol. b167, 189(1991). “Localized states induced by self-intersti

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